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Cari tutti,

vi ricordiamo l'incontro SMeet di venerdì 19 Maggio 2023 alle ore 11:30, ESCLUSIVAMENTE IN PRESENZA in aula Campisano, sede IMM-CNR.

Il meeting prevede:

* Speaker: Prof. Lorenzo Faraone and Gilberto A. Umana-Membreno
* Titolo: Studies of Electron transport in GaN and SiC field-effect transistors
* Chair: Dott. Vittorio Privitera

vi ricordiamo l'incontro SMeet di venerdì 19 Maggio 2023 alle ore 11:30, ESCLUSIVAMENTE IN PRESENZA in aula Campisano, sede IMM-CNR.

Il meeting prevede:

* Speaker: Prof. Lorenzo Faraone and Gilberto A. Umana-Membreno
* Titolo: Studies of Electron transport in GaN and SiC field-effect transistors
* Chair: Dott. Vittorio Privitera

Abstract:
Modernsemiconductor heterostructures can contain multiple populations of distinctcarrier species which can be: intentional (e.g., p-n junctions), arisingnaturally due to carriers in more than one eigenenergy state (e.g.,inversion/accumulation layers and quantum wells), or unintentional due to parasiticconduction channels (e.g., conduction through barrier and/or channel/substratein heterostructure field-effect transistors).  Accurate characterisation ofelectronic transport properties in such structures demands a more sophisticatedmethodology than the conventional analysis of Hall-effect measurements at asingle value of magnetic field intensity. Even though multi-carrier fitting(MCF) can be employed to analyse magnetic field dependent Hall and resistivity data,this approach does not yield unique transport parameters because it demands startingassumptions regarding the number and type of carriers present, as well as initialestimates for the corresponding mobilities and densities. This difficulty canbe overcome by using the mobility spectrum analysis technique (first proposedby Beck and Anderson in 1987 [1[) which, over the last decades, has evolved intoa sophisticated methodology with numerous implementations, including the commerciallyavailable quantitative mobility spectrum analysis (QMSA)[2], maximum-entropymobility spectrum analysis (MEMSA) [3], and the high-resolution mobilityspectrum analysis (HRMSA)[4].
In this work, wepresent results of mobility spectrum analysis-based studies of electronictransport in wide bangap semiconductor structures, including SiC-based MOSFETsand GaN-based high electron mobility field effect transistor (HEMT) structures.It is shown that the MSA approach can provide information that aidsoptimisation of the epitaxial growth and device fabrication processes, and canalso yield greater insight into the fundamental scattering mechanisms andelectronic transport phenomena in two-dimensional inversion and accumulationlayers. Figure 1 shows the mobility peaks associated with interface and bulkelectron populations in SiC-based MOSFET with an ion-implanted buried n-typelayer at a gate bias of 15 V [5].
1. W.A. Beck and J.R. Anderson, J. Appl.Phys. 62, 541 (1987).
2. I. Vurgaftman et al., Appl. Phys. 84,4966 (1998).
6. J. Rothman, et al, J. Electron. Mater.35, 1174 (2006).
4. G. A. Umana-Membreno et al., J. Electron.Mater. 39, 1023 (2010).
5. G.A. Umana-Membreno et al, Microelec. Eng. 147, 137 (2015)

Vi aspettiamo numerosi.
Saluti.