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Cari tutti,

vi invitiamo a partecipare al nono incontro “SMeet” - Science Sharing Meetings, previsto per giorno Venerdì, 4 Giugno alle ore 11:30 (ammissione in stanza disponibile dalle 11:20) che, attenendoci al protocollo relativo all’emergenza COVID-19, si terrà online tramite la piattaforma Microsoft Teams attraverso il seguente link:
 
http://bit.ly/SMEET-IMM
 
Il meeting prevede:

* Speaker: Dott. Patrick Fiorenza

* Chair: Dott. Antonino La Magna

* Titolo: SiO2/4H-SiC interface: the key of the MOSFET Vth instability

* Abstract:
Silicon carbide (4H-SiC) is an excellent wideband gap semiconductor for the fabrication of metal oxide semiconductor field effect transistors (MOSFETs) suitable for highly efficient power switching applications. However, the device behavior is strongly influenced by SiO2/4H-SiC interface properties and some issues still limit the 4H-SiC MOSFET performances, e.g. the threshold voltage (Vth) instability phenomena and the poor channel mobility. To get more insights on these physical aspects, the methods commonly adopted for the SiO2/Si system are not valid in SiC, due to the different intrinsic nature of the SiO2/4H-SiC interface.
In this presentation, advanced electrical characterization methods developed at CNR-IMM to identify the different trapping mechanisms at the SiO2/4H-SiC interface and in the neari nterface oxide region will be presented [1]. In particular, it will be shown that the develop approach allowed clarifying the impact of the interface chemistry on the electrical behaviour of devices fabricated under different process conditions [2].

[1] P. Fiorenza, F. Giannazzo, S. Cascino, M. Saggio, F. Roccaforte; Appl. Phys Lett. 117, 103502 (2020)
[2] P. Fiorenza, C. Bongiorno, F. Giannazzo, M. S. Alessandrino, A. Messina, M. Saggio, F. Roccaforte; Appl. Surf. Sci. 557, 149752(2021)

Vi aspettiamo numerosi,

Saluti

SMeet – Comitato Organizzativo
smeet[@]imm.cnr.it
Web-page: https://hq.imm.cnr.it/smeet-science-sharing-meetings