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Carissimi,

nel mese di Maggio faremo diversi webinar su argomenti relativi al progetto CHALLENGE. Il primo di questi webinar sarà tenuto dal Prof. P. Wellmann (presidente E-MRS) sulla crescita bulk del SiC (sia 4H che 3C). Il webinar sarà il 5 Maggio alle 15. Siete tutti invitati a partecipare. Le istruzioni per la partecipazione sono riportate qui sotto.

CHALLENGE is delighted to invite you to its latest event “Sublimation growth of SiC bulk crystals – CHALLENGE educational webinar 2021” which will inaugurate our May webinar series on SiC Bulk growth.

For this session, speaker Professor P. Wellmann from the materials science and engineering department at University of Erlangen-Nuremberg, FAU will focus on high temperature crystal growth process of SIC and present some novelty development in his latest studies as part of the CHALLENGE project.

The presentation will provide an introduction to the high temperature crystal growth process of SiC as well as a report on three hot topics currently studied in the lab. Firstly, 3D in-situ  visualization of the growth process using X-ray computed tomography has been used to investigate the shape of the crystal growth interface as well as the morphology of the consumed SiC powder source. From these live-view studies deeper insight into the growth process is provided. Secondly, another study on the analysis of dislocation networks in 4H-SiC as they form in the crystal during the growth process and the cooling down of the SiC boule subsequent to the growth phase. In particular the cooling down time effects the final dislocation density on the SiC crystals. Thirdly, the presentation of a bulk growth process of cubic, so called 3C-SiC that has been developed. In the cases of those three stedies, novel developments are presented that have significantly deepened the knowledge base of bulk growth process of SiC. 

The research activities in the crystal growth lab of Professor P. Wellmann at the electronic materials and energy technology (i-meet) division of the materials department (University of Erlangen-Nuremberg, FAU) are devoted to modern topics in semiconductor technology and include crystal growth, epitaxy and characterization of various electronic materials. The major focus lies on crystal growth and characterization of SiC for application in power electronics and a number of novel optoelectronic applications. Since 2017, the activities of the Crystal Growth Lab have been listed by the European Union as a Key Enabling Technology (KET) Centre on "FAU - Industrial Services in Crystal Growth of SiC". The R&D includes fundamental Research as funded by the German Science Foundation as well as applied developments in the frame of industrial contracts. 

Interested in this event? Register here:
https://www.eventbrite.com/e/sublimation-growth-of-sic-bulk-crystals-challenge-educational-webinar-2021-tickets-151941756885 

Grazie, a presto

Francesco

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Francesco La Via 

Research Director
SiC Epitaxial Growth 

Coordinator CHALLENGE Project
H2020 - NMBP-02-2016
web page: http://www.h2020challenge.eu

Coordinator SiC nano for picoGeo
FET-OPEN
web page: http://picogeo.eu/


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Research Info: http://www.researcherid.com/rid/E-8035-2011 
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